In wide-bandgap semiconductor (SiC/GaN) wafer probe testing and 5G millimeter-wave RF module assembly, ESD protection targets Charged Device Model (CDM) events and high-frequency EMI interference. Under nanoscale gate-oxide dimensions (MOSFETs): Overly Conductive Mats: Trigger microsecond steep discharge current spikes (high dI/dt), causing CDM gate oxide breakdown and generating severe EMI harmonics across test instruments. Insulating […]
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